Samsung is planning to bring a special edition of Galaxy S10+ with industry’s first 1TB eUFS 2.1 (embedded Universal Flash Storage). The rumors may come true, as the company has today announced its leading 1TB eUFS 2.1 storage for phones. The company is now mass producing the chips, and it will soon hit Samsung’s upcoming flagship.
The new eUFS chip measures 11.5 x 13mm the same as the one we’ve seen with the 512GB of internal storage. Well, it doubles the storage capacity by combining 16 stacked V-NAND flash memory layers and a newly developed controller. Anyways, the company did manage to maintain significant speed gains, as well.
The all-new 1TB eUFS chip from Samsung has sequential read speeds of up to 1000 MB/s and sequential write speed of 260 MB/s. With that said, the new storage can attain speeds up to 38% faster than the 512GB offering. In comparison, the standard 2.5-inch SATA SSD caps at around 540MB/s read speeds. It’s unquestionably a significant leap in the bridging gap between the technologies.
|Memory||Sequential Read||Sequential Write||Random Read||Random Write|
|1TB eUFS 2.1|| |
|260 MB/s||58,000 IOPS||50,000 IOPS|
|512GB eUFS 2.1|| |
|255 MB/s||42,000 IOPS||45,000 IOPS|
|256GB UFS Card|| |
|170 MB/s||40,000 IOPS||35,000 IOPS|
| 256 eUFS 2.0||850||260 MB/s||45,000 IOPS|| |
|128GB eUFS 2.0||300||150 MB/s||19,000 IOPS||14,000 IOPS|